1200 V level-shift three-phase SOI EiceDRIVER™ offers superior robustness

Thursday 26 Nov 2020 | Associate Member | Member Press Release | Member Resources |

Munich, Germany – 26 November 2020 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) broadens its level-shift EiceDRIVER™ portfolio with a 1200 V three-phase gate driver. It is based on the company’s unique silicon-on-insulator (SOI) technology. The device provides leading negative VS transient immunity, superior latch-up immunity, fast over-current protection, and the monolithic integration of real bootstrap diodes. These unique features reduce BOM and enable a more robust design with a compact form factor suitable for industrial drives and embedded inverter applications.

The level-shift gate driver 6ED2230 provides 350 mA / 650 mA source and sink drive capability. It prevents shoot-through thanks to the integrated dead time. The integrated over-current protection comparator with a +/-5 percent reference threshold accuracy provides fast, repeatable and reliable switch protection. The integrated bootstrap diodes offer ultra-fast reverse recovery with a very low typical resistance of 40 Ω.

Negative VS transient voltage immunity of -100 V with repeating 700 ns wide pulses supports superior robustness and reliable operation. The low and high side voltage supplies feature independent under-voltage lockout (UVLO) for safe operation. A unique DSO-24 footprint separates the low and high voltage on opposite sides of the package to further increase clearance and creepage.

Availability

The EiceDRIVER 6ED2230 can be ordered now in a DSO-24 300 mil package (industry-standard DSO-28 package dimensions) with a unique footprint. This package has a reduced pin-count leading to a superior 2 kV ESD rating according to human-body model (HBM). More information is available at www.infineon.com/SOI.

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